IS31AP4915 integrated silicon solution, inc. ? www.issi.com 1 rev.b, 09/11/2012 20v p-p charge pump ceramic speaker driver september 2012 general description the IS31AP4915 features a mono power amplifier with an integrated charge-pump power supply specifically designed to drive the high capacitance of a ceramic loudspeaker. the IS31AP4915 maximizes battery life by offering high performance efficiency. the IS31AP4915 is ideally suited to deliver the high output-voltage swing required to drive ceramic/piezoelectric speakers. the device utilizes comprehensive click-and-pop suppression and shutdown control. the IS31AP4915 is fully specified over the -40c to +85c extended temperature range and is available in small lead-free 16-pin qfn (4mm 4mm) packages. typical application circuit features ? integrated charge-pump power supply - no inductor required ? thermal protection ? pop reduction circuitry ? 20v p-p voltage swing into piezoelectric speaker ? qfn-16, 4mm 4mm applications ? cd/mp3 players ? smart phones ? cellular phones ? pdas ? handheld gaming 10 uf 10 uf 33nf 1 uf shutdown 2.5 - 5.5v out + pgnd c1p in sgnd svss pvss c1n pvdd svdd sd out - fb 200k 5k 100k 10k 10k 10ohm 10ohm 220pf figure 1 typical application circuit
IS31AP4915 integrated silicon solution, inc. ? www.issi.com 2 rev.b, 09/11/2012 pin configuration package pin configuration (top view) qfn-16 1 2 3 4 16 9 10 11 15 14 13 5 6 7 8 12 nc svss out- svdd out+ fb sd in c1n pvss pgnd nc sgnd sd pvdd c1p pin description no. pin description 1 c1p charge pump flying ca pacitor positive terminal. 2 pgnd power ground, connect to ground. 3 c1n charge pump flying capacitor negative terminal. 4 pvss output from charge pump. 5, 13 nc no connection. 6 svss amplifier negative supply, connect to pvss. 7 out- negative output signal. 8 svdd amplifier positive supply, connect to pvdd. 9 out+ positive output signal. 10 fb feed back. 11, 15 sd ______ shutdown, active low logic. 12 in audio input signal. 14 sgnd signal ground, connect to ground. 16 pvdd charge pump supply voltage, connect to positive supply. thermal pad connect to gnd. copyright ? ? ? 2012 ? integrated ? silicon ? solution, ? inc. ? all ? rights ? reserved. ? issi ? reserves ? the ? right ? to ? make ? changes ? to ? this ? specification ? and ? its ? products ? at ? any ? time ? without ? notice. ? issi ? assumes ? no ? liability ? arising ? out ? of ? the ? application ? or ? use ? of ? any ? information, ? products ? or ? services ? described ? herein. ? customers ? are ? advised ? to ? obtain ? the ? latest ? version ? of ? this ? device ? specification ? before ? relying ? on ? any ? published ? information ? and ? before ? placing ? orders ? for ? products. ? integrated ? silicon ? solution, ? inc. ? does ? not ? recommend ? the ? use ? of ? any ? of ? its ? products ? in ? life ? support ? applications ? where ? the ? failure ? or ? malfunction ? of ? the ? product ? can ? reasonably ? be ? expected ? to ? cause ? failure ? of ? the ? life ? support ? system ? or ? to ? significantly ? affect ? its ? safety ? or ? effectiveness. ? products ? are ? not ? authorized ? for ? use ? in ? such ? applications ? unless ? integrated ? silicon ? solution, ? inc. ? receives ? written ? assurance ? to ? its ? satisfaction, ? that: ? a.) ? the ? risk ? of ? injury ? or ? damage ? has ? been ? minimized; ? b.) ? the ? user ? assume ? all ? such ? risks; ? and ? c.) ? potential ? liability ? of ? integrated ? silicon ? solution, ? inc ? is ? adequately ? protected ? under ? the ? circumstances
IS31AP4915 integrated silicon solution, inc. ? www.issi.com 3 rev.b, 09/11/2012 ordering information industrial range: -40c to +85c order part no. package qty/reel IS31AP4915-qfls2-tr qfn-16, lead-free 3000
IS31AP4915 integrated silicon solution, inc. ? www.issi.com 4 rev.b, 09/11/2012 absolute maximum ratings supply voltage, v dd - 0.3v ~ +6.5v voltage at any input pin - 0.3v ~ v dd +0.3v maximum junction temperature, t jmax 150c storage temperature range, t stg - 65c ~ +150c operating temperature range, t a ? 40c ~ +85c note: stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only and functional operation of the device at these or any other condition beyond those indicated in the operational sections of th e specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. recommended operating conditions symbol parameter min. max. unit sv dd , pv dd supply voltage 2.5 6.5 v v ih high level input voltage 1.5 v v il low level input voltage 0.5 v electrical characteristics t a =25c. (note 1) symbol parameter condition min. typ. max. unit |v os | output offset voltage 6 mv i dd supply current v dd = 3v, sd ______ = v dd 6.0 8.0 ma v dd = 5v, sd ______ = v dd 8.5 10.5 shutdown mode, v dd = 2.5v ~ 6.5v 1 a electrical characteristics v dd = 3.6v, t a = 25c (unless otherwise noted) (note 2) symbol parameter condition min. typ. max. unit v out output voltage f = 1khz thd+n = 10% z l = 1 f+10 ? vcc = 5v 7.9 v rms vcc = 3.6v 5.7 vcc = 2.7v 4.3 thd+n total harmonic distortion plus noise z l = 1 f+10 ? ,v out = 1khz/2v rms 0.01 % z l = 1 f+10 ? ,v out = 1khz/4v rms 0.01 vn noise output voltage 10 v rms fosc charge pump switching frequency 320 khz t on start-up time from shutdown 450 s snr signal-to-noise ratio 100 db thermal shutdown threshold 160 c hysteresis 15 c note 1: production testing of the device is performed at 25c. functional operation of the device and parameters specified over other temperature range, are guaranteed by design, characterization and process control. note 2: guaranteed by design.
IS31AP4915 integrated silicon solution, inc. ? www.issi.com 5 rev.b, 09/11/2012 typical operating characteristics vcc = 2.7v vout = 3vrms vout = 1.25vrms figure 2 thd+n vs. frequency(r l = 1f+10 ? ) vcc = 3.6v vout = 4vrms vout = 2vrms figure 4 thd+n vs. frequency(r l = 1f+10 ? ) vcc = 5v vout = 6vrms vout = 3vrms figure 6 thd+n vs. frequency(r l = 1f+10 ? ) vcc = 2.7v f in = 1khz figure 3 thd+n vs. output voltage(r l = 1f+10 ? ) vcc = 3.6v f in = 1khz figure 5 thd+n vs. output voltage(r l = 1f+10 ? ) vcc = 5 v f in = 1khz figure 7 thd+n vs. output voltage(r l = 1f+10 ? )
IS31AP4915 integrated silicon solution, inc. ? www.issi.com 6 rev.b, 09/11/2012 01 2 3 45 0 25 vcc = 3.6v f in = 1khz figure 8 power consumption vs. output voltage(r l = 1f+10 ? ) 2 3 4 5 6 7 8 2.5 3 3.5 4 4.5 5 5.5 figure 10 supply current vs. supply voltage(r l = 1f+10 ? ) 01 2 3 4 5 6 7 vcc = 5v f in = 1khz figure 9 power consumption vs. output voltage(r l = 1f+10 ? ) 0 10 20 30 40 50 60 70 01 2 3 4 5 6 7 vcc = 5v f in = 1khz figure 11 supply current vs. output voltage(r l = 1f+10 ? )
IS31AP4915 integrated silicon solution, inc. ? www.issi.com 7 rev.b, 09/11/2012 functional block diagram bias in sdb c1p out+ svcc click-and-pop suppression uvlo & sd control charge pump c1n out- pvcc sgnd pgnd fb svss pvss
IS31AP4915 integrated silicon solution, inc. ? www.issi.com 8 rev.b, 09/11/2012 application information input-blocking capacitors dc input-blocking capacitors are required to be added in series with the audio signal into the input pin of the IS31AP4915. this capacitor block the dc portion of the audio source and allow the IS31AP4915 inputs to be properly biased to provide maximum performance. these capacitors form a high-pass filter with the input impedance of the IS31AP4915. the cutoff frequency is calculated using equation 1. for this calculation, the capacitance used is the input-blocking capacitor and the resistance is the input impedance of the IS31AP4915. because the gains of both the IS31AP4915 is fixed, the input impedance remains a constant value. using the input impedance value from the operating characteristics table, the frequency and/or capacitance can be determined when one of the two values is given. 1 charge pump flying capacitor and pvss capacitor the charge pump flying capacitor serves to transfer charge during the generation of the negative supply voltage. the pvss capacitor must be at least equal to the charge pump capacitor in order to allow maximum charge transfer. low esr capacitors are an ideal selection, and a value of 10 f is typical. capacitor values that are smaller than 10 f can be used, but the maximum output power is reduced and the device may not operate to specifications decoupling capacitors the IS31AP4915 require adequate power supply decoupling to ensure that the noise and total harmonic distortion (thd) are low. a good low equivalent-series-resistance (esr) ceramic capacitor, typically 1 f, placed as close as possible to the device v dd lead works best. placing this decoupling capacitor close to the IS31AP4915 is important for the performance of the amplifier. for filtering lower frequency noise signals, a 10 f or greater capacitor placed near the audio power amplifier would also help, but it is not required in most applications because of the high psrr of this device. layout recommendations the sgnd and pgnd pins of the IS31AP4915 must be routed separately back to the decoupling capacitor in order to provide proper device operation. if the sgnd and pgnd pins are connected directly to each other, the part functions without risk of failure, but the noise and thd performance do not meet the specifications.
IS31AP4915 integrated silicon solution, inc. ? www.issi.com 9 rev.b, 09/11/2012 classification reflow profiles profile feature pb-free assembly preheat & soak temperature min (tsmin) temperature max (tsmax) time (tsmin to tsmax) (ts) 150c 200c 60-120 seconds average ramp-up rate (tsmax to tp) 3c/second max. liquidous temperature (tl) time at liquidous (tl) 217c 60-150 seconds peak package body temperature (tp)* max 260c time (tp)** within 5c of the specified classification temperature (tc) max 30 seconds average ramp-down rate (tp to tsmax) 6c/second max. time 25c to peak temperature 8 minutes max. figure 12 classification profile
IS31AP4915 integrated silicon solution, inc. ? www.issi.com 10 rev.b, 09/11/2012 package information qfn-16 note: all dimensions in millimeters unless otherwise stated.
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